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FZ2400R17KE3_B2

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The Infineon FZ2400R17KE3_B2 is a high-performance IGBT module designed for demanding industrial applications, offering exceptional power handling, high efficiency, and soft-switching characteristics.
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Technical specifications for FZ2400R17KE3_B2

  • Manufacturer:
    Infineon Technologies
  • Part Number:
    FZ2400R17KE3_B2
  • Product Family:
    Infineon Technologies
  • Collector-emitter voltage:
    1700V
  • Continuous DC collector current:
    2400A
  • Repetitive peak collector current:
    4800A
  • Total power dissipation:
    15,5kW
  • Gate-emitter peak voltage:
    +/-20V
  • Collector-emitter saturation voltage:
    typ. 2,00, 2,40V, max. 2,45V
  • Gate threshold voltage:
    min. 5,2V, typ. 5,8V, max. 6,4V
  • Gate charge:
    28,0µC
  • Internal gate resistor:
    0,6Ω
  • Thermal resistance, junction to case:
    9,00K/kW
  • Temperature under switching conditions:
    -40 ... 125 °C
  • Weight:
    1.2 kg
  • Estimated shipping dimensions:
    12.3x9.4x7.5cm
  • Tariff Code:
    8537101190
  • Country of origin:
    Germany
  • Place of shipment:
    Xiamen, Fujian, China
By purchasing this item, you agree to the Terms & Conditions, ApterPower is not an authorized distributor for listed manufacturers or tradenames and therefore the manufacturer's warranty does not apply. All our products come with ApterPower's 1-year warranty.
Description
The Infineon FZ2400R17KE3_B2 IGBT module is engineered for high-power industrial applications, providing a collector-emitter voltage rating of 1700V and a continuous DC collector current of 2400A, making it suitable for heavy-duty tasks in power electronics, motor drives, and industrial machinery. The module’s repetitive peak collector current of 4800A ensures it can handle significant peak demands while maintaining stability and reliability.

This IGBT module is built with a gate-emitter peak voltage of ±20V and a gate charge of 28.0µC, which contributes to faster switching times and reduced switching losses. With its total power dissipation rated at 15.5kW, the FZ2400R17KE3_B2 efficiently handles high power outputs with minimal thermal stress, thanks to a thermal resistance of 9.00K/kW (junction to case). The module also has an operating temperature range of -40°C to +125°C under switching conditions, ensuring it performs effectively in extreme environments.

The module’s collector-emitter saturation voltage is optimized to minimize power loss, with a typical range of 2.00 to 2.40V and a maximum value of 2.45V. The internal gate resistor is 0.6Ω, contributing to the module’s overall high efficiency and performance in demanding applications.
Alternative Names
F22400R17KE3_B2 FZZ400R17KE3_BZ FZ24OOR17KE3_B2 FZ2400RI7KE3_B2 FZ2400R17KE3_82 FZ2400R17KE3B2
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FAQS

The following is a list of questions commonly asked by our customers. Please contact us if you have a question about our process that is not answered below.
What is the gate voltage threshold (V_GS(th))?
The gate voltage threshold of this module is a minimum of 5.2V, a typical 5.8V, and a maximum of 6.4V, ensuring startup at the appropriate voltage.
What is the delivery time for the Infineon FZ2400R17KE3_B2 module?
Typically, the delivery time for the Infineon FZ2400R17KE3_B2 is 2-3 business days, depending on stock availability and shipping destination.
Can I receive additional photos or datasheets for the Infineon FZ2400R17KE3_B2 module?
Yes, we can provide high-resolution images and detailed datasheets to help you better understand the product's features and specifications.
What is the gate charge (Qg) of this module?
The gate charge of this module is 28.0µC, suitable for fast switching requirements.
What is the internal gate resistance of this module?
The internal gate resistance is 0.6Ω, ensuring stable transmission of the gate drive signal.

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