The Infineon FZ2400R17KE3_B2 is a high-performance IGBT module designed for demanding industrial applications, offering exceptional power handling, high efficiency, and soft-switching characteristics.
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Technical specifications for FZ2400R17KE3_B2
Manufacturer:
Infineon Technologies
Part Number:
FZ2400R17KE3_B2
Product Family:
Infineon Technologies
Collector-emitter voltage:
1700V
Continuous DC collector current:
2400A
Repetitive peak collector current:
4800A
Total power dissipation:
15,5kW
Gate-emitter peak voltage:
+/-20V
Collector-emitter saturation voltage:
typ. 2,00, 2,40V, max. 2,45V
Gate threshold voltage:
min. 5,2V, typ. 5,8V, max. 6,4V
Gate charge:
28,0µC
Internal gate resistor:
0,6Ω
Thermal resistance, junction to case:
9,00K/kW
Temperature under switching conditions:
-40 ... 125 °C
Weight:
1.2 kg
Estimated shipping dimensions:
12.3x9.4x7.5cm
Tariff Code:
8537101190
Country of origin:
Germany
Place of shipment:
Xiamen, Fujian, China
By purchasing this item, you agree to the Terms & Conditions, ApterPower is not an authorized distributor for listed manufacturers or tradenames and therefore the manufacturer's warranty does not apply. All our products come with ApterPower's 1-year warranty.
Description
The Infineon FZ2400R17KE3_B2 IGBT module is engineered for high-power industrial applications, providing a collector-emitter voltage rating of 1700V and a continuous DC collector current of 2400A, making it suitable for heavy-duty tasks in power electronics, motor drives, and industrial machinery. The module’s repetitive peak collector current of 4800A ensures it can handle significant peak demands while maintaining stability and reliability.
This IGBT module is built with a gate-emitter peak voltage of ±20V and a gate charge of 28.0µC, which contributes to faster switching times and reduced switching losses. With its total power dissipation rated at 15.5kW, the FZ2400R17KE3_B2 efficiently handles high power outputs with minimal thermal stress, thanks to a thermal resistance of 9.00K/kW (junction to case). The module also has an operating temperature range of -40°C to +125°C under switching conditions, ensuring it performs effectively in extreme environments.
The module’s collector-emitter saturation voltage is optimized to minimize power loss, with a typical range of 2.00 to 2.40V and a maximum value of 2.45V. The internal gate resistor is 0.6Ω, contributing to the module’s overall high efficiency and performance in demanding applications.
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