TD330N16KOF
TD330N16KOF
TD330N16KOF
TD330N16KOF
TD330N16KOF
TD330N16KOF
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TD330N16KOF

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Infineon TD330N16KOF is a 1600 V, 330 A 50 mm thyristor/diode power module for controlled rectifier circuits.
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Technical specifications for TD330N16KOF

  • Manufacturer:
    Infineon Technologies
  • Part Number:
    TD330N16KOF
  • Product Family:
    Infineon Technologies
  • Product Type:
    1600 V 330 A Thyristor/Diode Power Module
  • Stock:
    1
  • Repetitive peak blocking voltage:
    1600 V
  • Average on-state current:
    330 A at 85 °C case temperature
  • RMS on-state current:
    520 A
  • Surge current:
    12.5 kA at 25 °C; 10 kA at maximum junction temperature
  • I²t rating:
    781,250 A²s at 25 °C; 500,000 A²s at maximum junction temperature
  • Critical di/dt:
    250 A/µs
  • Critical dv/dt:
    1000 V/µs
  • On-state voltage:
    1.28 V at 800 A
  • Threshold voltage:
    0.80 V
  • Slope resistance:
    0.50 mohm
  • Gate trigger current:
    200 mA maximum
  • Gate trigger voltage:
    2.0 V maximum
  • Insulation test voltage:
    3.0 kV for 1 minute; 3.6 kV for 1 second
  • Thermal resistance junction-to-case:
    0.056 K/W per module for 180° sine conduction
  • Junction temperature:
    -40 to 130 °C
  • Mounting torque:
    5 Nm
  • Terminal torque:
    12 Nm
  • Control terminals:
    2.8x0.8 mm
  • Weight:
    1.764 lbs (0.8 kg)
  • Estimated shipping dimensions:
    11.5x5x5.2cm
  • Tariff Code:
    8541300000
  • Country of origin:
    Hungary
  • Place of shipment:
    Xiamen,Fujian,China
By purchasing this item, you agree to the Terms & Conditions, ApterPower is not an authorized distributor for listed manufacturers or tradenames and therefore the manufacturer's warranty does not apply. All our products come with ApterPower's 1-year warranty.

More Information

Overview Manuals Power Path Thermal Design Gate Control Mounting

Features:

  • Combines a phase-control thyristor and diode in one 1600 V insulated power block.
  • Carries 330 A average on-state current when case temperature remains at the specified condition.
  • Transfers semiconductor losses through an isolated baseplate secured by the documented mounting torque.
Infineon TD330N16KOF separates its high-current power terminals from the low-energy gate connection.

The thyristor controls the conduction interval while the diode completes the specified rectifier arrangement.

Electrical loss, thermal resistance and heat-sink contact must be evaluated as one operating system.

The Infineon TD330N16KOF 1600 V 330 A Thyristor/Diode Power Module is listed by the OEM as active and preferred.
Infineon TD330N16KOF Thyristor/Diode Module Manuals,Datasheets,Link Important Notice: Other accessories, manuals, cables, calibration data, software, etc. are not included with this equipment unless listed in the above stock item description. All prices are shown in USD.

Thyristor–Diode Conduction Sequence

  • Controlled arm: A gate pulse starts current in the thyristor arm at the selected point in the AC cycle.
  • Uncontrolled arm: The diode conducts according to circuit polarity and does not require a separate trigger.
  • Off-state duty: The repetitive blocking rating applies while the relevant semiconductor arm is not conducting.
  • Current classes: Continuous average current and short non-repetitive surge current describe different loading intervals.

Heat Flow from Junction to Heat Sink

  • Conduction loss: Threshold voltage and slope resistance combine with the load waveform to determine on-state loss.
  • Dual heat source: The thyristor and diode junctions contribute heat to the common module base.
  • Insulated transfer: Heat crosses the electrically insulated baseplate before entering the external heat sink.
  • Interface pressure: Correct mounting torque keeps the baseplate in uniform contact with the thermal interface material.
  • Junction limit: The completed cooling path must hold both semiconductor junctions within the specified temperature boundary.

Trigger and Transient Coordination

  • Gate drive: The trigger circuit must provide the documented gate current and voltage between gate and cathode.
  • Cathode reference: The control connection is electrically distinct from the main terminals but remains referenced to the thyristor cathode.
  • Current rise: Circuit inductance and drive timing must keep turn-on di/dt within the device limit.
  • Voltage rise: The surrounding snubber and commutation network must keep off-state dv/dt within its separate limit.

Mechanical and Electrical Interfaces

  • Heat-sink face: The isolated baseplate requires a flat, clean mounting surface and an even thermal interface.
  • Base fastening: Mounting hardware is tightened to 5 Nm to establish the specified mechanical contact.
  • Power joints: Main-current conductors use the larger terminals and the separate 12 Nm terminal torque.
  • Control tabs: Gate and auxiliary wiring connect through the 2.8 x 0.8 mm flat terminals rather than the power studs.
Description
Infineon TD330N16KOF is a 50 mm power block containing a phase-control thyristor and a diode in one electrically insulated module. The 1600 V blocking class and 330 A average-current rating define its role in controlled rectifier power paths rather than low-level signal switching.

During conduction, Infineon TD330N16KOF carries load current through the main power terminals while its gate connection triggers the thyristor at the required phase angle. The threshold-voltage and slope-resistance values describe the conduction loss that must be included when the heat sink is selected.

Heat from Infineon TD330N16KOF travels from both semiconductor arms through the isolated baseplate into the mounting surface. Junction-to-case thermal resistance, the maximum junction temperature and the specified mounting torque therefore work together: inadequate interface pressure increases temperature even when load current remains within the electrical rating.

The main terminals of Infineon TD330N16KOF accept the documented terminal torque, while separate 2.8 x 0.8 mm control tabs carry the gate circuit. Surge-current, di/dt and dv/dt limits apply to different transient mechanisms and must each be checked against the rectifier and protection design.
Alternative Names
TD330N16 KOF TD 330 N 16 KOF TD330N-16-KOF Infineon TD330N16KOF TD330N16KOFHPSA2 TD330N16KOF Thyristor Module TD330N16KOF 1600V 330A TD33ON16KOF
Technical notes
Infineon TD330N16KOF combines one phase-control thyristor and one diode on an isolated baseplate with separate power and gate connections.
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FAQS

The following is a list of questions commonly asked by our customers. Please contact us if you have a question about our process that is not answered below.
What circuit role does Infineon TD330N16KOF perform?
Infineon TD330N16KOF combines a controllable thyristor arm with a diode arm for phase-controlled high-current rectifier circuits.
Why does Infineon TD330N16KOF require a heat sink below its current limit?
Conduction loss in Infineon TD330N16KOF raises junction temperature, so its current rating depends on case temperature and the complete thermal path.
Which values define conduction loss in Infineon TD330N16KOF?
Use the threshold voltage and slope resistance of Infineon TD330N16KOF with the actual current waveform to calculate semiconductor loss.
How is the thyristor in Infineon TD330N16KOF switched on?
A gate driver applies the required current and voltage between the gate and cathode terminals of Infineon TD330N16KOF at the selected firing angle.
What should be checked before tightening Infineon TD330N16KOF?
Confirm a flat heat-sink surface, suitable interface material and the separate mounting and power-terminal torque values for Infineon TD330N16KOF.
Do the surge and average ratings of Infineon TD330N16KOF describe the same condition?
No. Infineon TD330N16KOF uses the average rating for continuous loading and the surge rating for short non-repetitive current events.